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GSMCentrum.CZ » Electronic components » Discrete semiconductor modules » MOSFET transistor modules


Module SiC diode/transistor 800V 21A SP4 Ugs ±30V Idm 112A

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Number: TMEAPTC80A15SCTG
Package:
Min. quantity: 9
Manufacturer: MICROCHIP (MICROSEMI)

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Min. quantity: 9


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Popis produktu

Module SiC diode/transistor 800V 21A SP4 Ugs ±30V Idm 112A - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleMOSFET transistor
Semiconductor structureSiC diode/transistor
Drain-source voltage800V
Drain current21A
CaseSP4
TopologyMOSFET half-bridge
TopologyNTC thermistor
Electrical mountingFASTON connectors
Electrical mountingscrew
On-state resistance150mΩ
Pulsed drain current112A
Power dissipation277W
TechnologyCoolMOS™
TechnologySiC
TechnologySJ-MOSFET
Gate-source voltage±30V
Mechanical mountingscrew