GSMCentrum.CZ » Electronic components » Transistors » IGBT Transistors
| Availability | Only per order |
|---|---|
| Barcode: | |
| Number: | TMEMMIX1X200N60B3 |
| Package: | |
| Min. quantity: | 1 |
| Manufacturer: | IXYS |
Transistor IGBT BiMOSFET™ 600V 120A 625W SMPD - Popis produktu
| Manufacturer | IXYS |
|---|---|
| Type of transistor | IGBT |
| Technology | BiMOSFET™ |
| Technology | GenX3™ |
| Technology | XPT™ |
| Collector-emitter voltage | 600V |
| Collector current | 120A |
| Power dissipation | 625W |
| Case | SMPD |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 1kA |
| Mounting | SMD |
| Gate charge | 315nC |
| Kind of package | tube |
| Turn-on time | 140ns |
| Turn-off time | 395ns |