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IGBT Transistors

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Transistor IGBT BiMOSFET™ 3.6kV 50A 660W TO247HV

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Number: TMEIXBX50N360HV
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Min. quantity: 1
Manufacturer: IXYS

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Popis produktu

Transistor IGBT BiMOSFET™ 3.6kV 50A 660W TO247HV - Popis produktu

ManufacturerIXYS
Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage3.6kV
Collector current50A
Power dissipation660W
CaseTO247HV
Gate-emitter voltage±20V
Pulsed collector current420A
MountingTHT
Gate charge210nC
Kind of packagetube
Turn-on time889ns
Turn-off time1.88µs
Features of semiconductor deviceshigh voltage