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GSMCentrum.CZ » Electronic components » Discrete semiconductor modules » MOSFET transistor modules


Module SiC diode/transistor 800V 11A SP4 Ugs ±30V Idm 60A

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Barcode:
Number: TMEAPTC80H29SCTG
Package:
Min. quantity: 8
Manufacturer: MICROCHIP (MICROSEMI)

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Min. quantity: 8


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Popis produktu

Module SiC diode/transistor 800V 11A SP4 Ugs ±30V Idm 60A - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleMOSFET transistor
Semiconductor structureSiC diode/transistor
Drain-source voltage800V
Drain current11A
CaseSP4
TopologyH-bridge
TopologyNTC thermistor
Electrical mountingFASTON connectors
Electrical mountingscrew
On-state resistance290mΩ
Pulsed drain current60A
Power dissipation156W
TechnologyCoolMOS™
TechnologySiC
TechnologySJ-MOSFET
Gate-source voltage±30V
Mechanical mountingscrew