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MOSFET transistor modules

GSMCentrum.CZ » Electronic components » Discrete semiconductor modules » MOSFET transistor modules


Module SiC diode/transistor 1.2kV 23A SP1 Ugs ±30V Idm 195A

Availability Only per order
Barcode:
Number: TMEAPTM120DA30CT1G
Package:
Min. quantity: 12
Manufacturer: MICROCHIP (MICROSEMI)


£77.4 price without VAT

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Min. quantity: 12


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Popis produktu

Module SiC diode/transistor 1.2kV 23A SP1 Ugs ±30V Idm 195A - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleMOSFET transistor
Semiconductor structureSiC diode/transistor
Drain-source voltage1.2kV
Drain current23A
CaseSP1
Topologyboost chopper
TopologyNTC thermistor
Electrical mountingPress-in PCB
On-state resistance360mΩ
Pulsed drain current195A
Power dissipation657W
TechnologyPOWER MOS 8®
TechnologySiC
Gate-source voltage±30V
Mechanical mountingscrew