GSMCentrum.CZ » Electronic components » Discrete semiconductor modules » MOSFET transistor modules
| Availability | Only per order |
|---|---|
| Barcode: | |
| Number: | TMEAPTM120DA30CT1G |
| Package: | |
| Min. quantity: | 12 |
| Manufacturer: | MICROCHIP (MICROSEMI) |
Module SiC diode/transistor 1.2kV 23A SP1 Ugs ±30V Idm 195A - Popis produktu
| Manufacturer | MICROCHIP (MICROSEMI) |
|---|---|
| Type of module | MOSFET transistor |
| Semiconductor structure | SiC diode/transistor |
| Drain-source voltage | 1.2kV |
| Drain current | 23A |
| Case | SP1 |
| Topology | boost chopper |
| Topology | NTC thermistor |
| Electrical mounting | Press-in PCB |
| On-state resistance | 360mΩ |
| Pulsed drain current | 195A |
| Power dissipation | 657W |
| Technology | POWER MOS 8® |
| Technology | SiC |
| Gate-source voltage | ±30V |
| Mechanical mounting | screw |