Shopping cart

Shopping cart

Login into shop

IGBT Transistors

IGBT Tranzistory

GSMCentrum.CZ » Electronic components » Transistors » IGBT Transistors


Module IGBT diode/transistor asymmetrical bridge Urmax 1.7kV

Availability Only per order
Barcode:
Number: TMEAPTGT150DH170G
Package:
Min. quantity: 5
Manufacturer: MICROCHIP (MICROSEMI)


£230.79 price without VAT

Select the transport (Price incl. transport)

Quantity pricing

Quantity 5+ ks More
Unit Price £230.79 ask for a price

Quantity

Min. quantity: 5


Shipping Cost

Popis produktu

Module IGBT diode/transistor asymmetrical bridge Urmax 1.7kV - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleIGBT
Semiconductor structurediode/transistor
Topologyasymmetrical bridge
Max. off-state voltage1.7kV
Collector current150A
CaseSP6C
Electrical mountingFASTON connectors
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current300A
TechnologyField Stop
TechnologyTrench
Mechanical mountingscrew