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IGBT Modules

GSMCentrum.CZ » Electronic components » Discrete semiconductor modules » IGBT Modules


Module IGBT diode/transistor asymmetrical bridge Urmax 1.2kV

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Number: TMEAPTGT100DH120TG
Package:
Min. quantity: 8
Availability Only per order
Manufacturer: MICROCHIP (MICROSEMI)

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Quantity 8+ ks More
Unit Price £104.97 ask for a price

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Module IGBT diode/transistor asymmetrical bridge Urmax 1.2kV - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleIGBT
Semiconductor structurediode/transistor
Topologyasymmetrical bridge
TopologyNTC thermistor
Max. off-state voltage1.2kV
Collector current100A
CaseSP4
Electrical mountingFASTON connectors
Electrical mountingsoldering
Gate-emitter voltage±20V
Pulsed collector current200A
TechnologyField Stop
TechnologyTrench
Mechanical mountingscrew