Shopping cart

Shopping cart

Login into shop

IGBT Transistors

IGBT Tranzistory

GSMCentrum.CZ » Electronic components » Transistors » IGBT Transistors


Module IGBT diode/transistor asymmetrical bridge Urmax 1.2kV

Availability Only per order
Barcode:
Number: TMEAPTGT75DH120T3G
Package:
Min. quantity: 13
Manufacturer: MICROCHIP (MICROSEMI)


£73.49 price without VAT

Select the transport (Price incl. transport)

Quantity pricing

Quantity 13+ ks More
Unit Price £73.49 ask for a price

Quantity

Min. quantity: 13


Shipping Cost

Popis produktu

Module IGBT diode/transistor asymmetrical bridge Urmax 1.2kV - Popis produktu

ManufacturerMICROCHIP (MICROSEMI)
Type of moduleIGBT
Semiconductor structurediode/transistor
Topologyasymmetrical bridge
TopologyNTC thermistor
Max. off-state voltage1.2kV
Collector current75A
CaseSP3F
Electrical mountingPress-in PCB
Gate-emitter voltage±20V
Pulsed collector current175A
TechnologyField Stop
TechnologyTrench
Mechanical mountingscrew